Enhanced Ferroelectricity in Hf‐Based Ferroelectric Device with ZrO2 Regulating Layer
Abstract HfAlO film‐based ferroelectric memory is a strong contender for the next‐generation nonvolatile memories. However, the remanent polarization intensity of HfAlO films is small compared to other Hf‐based ferroelectric films at low annealing temperatures. In order to further improve the remnan...
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| Huvudupphov: | , , , , , , , , , , |
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| Materialtyp: | Artigo |
| Språk: | Inglês |
| Utgiven: |
Wiley-VCH
2023-08-01
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| Serie: | Advanced Electronic Materials |
| Ämnen: | |
| Länkar: | https://doi.org/10.1002/aelm.202300208 |
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