Enhanced Ferroelectricity in Hf‐Based Ferroelectric Device with ZrO2 Regulating Layer

Abstract HfAlO film‐based ferroelectric memory is a strong contender for the next‐generation nonvolatile memories. However, the remanent polarization intensity of HfAlO films is small compared to other Hf‐based ferroelectric films at low annealing temperatures. In order to further improve the remnan...

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Detalhes bibliográficos

Principais autores:	Yongkai Liu, Tianyu Wang, Zhenhai Li, Jiajie Yu, Jialin Meng, Kangli Xu, Pei Liu, Hao Zhu, Qingqing Sun, David Wei Zhang, Lin Chen
Formato:	Artigo
Idioma:	Inglês
Publicado em:	Wiley-VCH 2023-08-01
Colecção:	Advanced Electronic Materials
Assuntos:	HfAlO ZrO2 ferroelectric enhancement regulating layers
Acesso em linha:	https://doi.org/10.1002/aelm.202300208
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