Robust Ferroelectricity in Micrometer–Thick Ce:HfO2 Films

Abstract HfO2–based ferroelectric is extensively studied for semiconductor applications due to its compatibility with complementary metal–oxide–semiconductor technology and stable ferroelectric behavior in the thin films. However, achieving robust ferroelectricity in micrometer–thick HfO2–based film...

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Autors principals:	Takaaki Miyasako, Saki Ishihara, Shingo Yoneda, Tadasu Hosokura
Format:	Artigo
Idioma:	Inglês
Publicat:	Wiley-VCH 2025-11-01
Col·lecció:	Advanced Electronic Materials
Matèries:	Ce‐doped HfO2 chemical solution deposition fluorite structure HfO2‐based ferroelectric film piezoelectric power electronics
Accés en línia:	https://doi.org/10.1002/aelm.202500553
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