Robust Ferroelectricity in Micrometer–Thick Ce:HfO2 Films
Abstract HfO2–based ferroelectric is extensively studied for semiconductor applications due to its compatibility with complementary metal–oxide–semiconductor technology and stable ferroelectric behavior in the thin films. However, achieving robust ferroelectricity in micrometer–thick HfO2–based film...
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| Principais autores: | , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Wiley-VCH
2025-11-01
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| coleção: | Advanced Electronic Materials |
| Assuntos: | |
| Acesso em linha: | https://doi.org/10.1002/aelm.202500553 |
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