Enhanced Ferroelectricity in Hf‐Based Ferroelectric Device with ZrO2 Regulating Layer

Abstract HfAlO film‐based ferroelectric memory is a strong contender for the next‐generation nonvolatile memories. However, the remanent polarization intensity of HfAlO films is small compared to other Hf‐based ferroelectric films at low annealing temperatures. In order to further improve the remnan...

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Hlavní autoři:	Yongkai Liu, Tianyu Wang, Zhenhai Li, Jiajie Yu, Jialin Meng, Kangli Xu, Pei Liu, Hao Zhu, Qingqing Sun, David Wei Zhang, Lin Chen
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	Wiley-VCH 2023-08-01
Edice:	Advanced Electronic Materials
Témata:	HfAlO ZrO2 ferroelectric enhancement regulating layers
On-line přístup:	https://doi.org/10.1002/aelm.202300208
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