Advanced Modeling and Simulation of Multilayer Spin–Transfer Torque Magnetoresistive Random Access Memory with Interface Exchange Coupling

In advancing the study of magnetization dynamics in STT-MRAM devices, we employ the spin drift–diffusion model to address the back-hopping effect. This issue manifests as unwanted switching either in the composite free layer or in the reference layer in synthetic antiferromagnets—a challenge that be...

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Autores principales:	Mario Bendra, Roberto Lacerda de Orio, Siegfried Selberherr, Wolfgang Goes, Viktor Sverdlov
Formato:	Artigo
Lenguaje:	Inglês
Publicado:	MDPI AG 2024-04-01
Colección:	Micromachines
Materias:	spintronic devices back-hopping spin–transfer torques interlayer exchange coupling micromagnetics MRAM
Acceso en línea:	https://www.mdpi.com/2072-666X/15/5/568
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