Optimization of a Spin-Orbit Torque Switching Scheme Based on Micromagnetic Simulations and Reinforcement Learning

Spin-orbit torque memory is a suitable candidate for next generation nonvolatile magnetoresistive random access memory. It combines high-speed operation with excellent endurance, being particularly promising for application in caches. In this work, a two-current pulse magnetic field-free spin-orbit...

Ausführliche Beschreibung

Bibliografische Detailangaben

Hauptverfasser:	Roberto L. de Orio, Johannes Ender, Simone Fiorentini, Wolfgang Goes, Siegfried Selberherr, Viktor Sverdlov
Format:	Artigo
Sprache:	Inglês
Veröffentlicht:	MDPI AG 2021-04-01
Schriftenreihe:	Micromachines
Schlagworte:	spin-orbit torque MRAM reinforcement learning two-pulse switching scheme magnetic field-free switching machine learning
Online-Zugang:	https://www.mdpi.com/2072-666X/12/4/443
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