Fabrication of SiC-on-Insulator (SiCOI) Layers by Chemical Vapor Deposition of 3C-SiC on Si-in-Insulator Substrates at Low Deposition Temperatures of 1120 °C

Compared to bulk silicon carbide (SiC) wafers, SiC-on-insulator (SiCOI) substrates enable new device designs of electronic switches as well as novel photonic applications. One application is a micro-resonator for the usage in a Kerr frequency comb. For SiCOI substrates, a deposition temperature belo...

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Autors principals:	Johannes Steiner, Jana Schultheiß, Shouzhong Wang, Peter J. Wellmann
Format:	Artigo
Idioma:	Inglês
Publicat:	MDPI AG 2023-11-01
Col·lecció:	Crystals
Matèries:	chemical vapor deposition cubic silicon carbide silicon-on-insulator photonic applications COMSOL Multiphysics
Accés en línia:	https://www.mdpi.com/2073-4352/13/11/1590
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