Performance and reliability improvements in SiC(0001) MOS devices via two-step annealing in H2/Ar gas mixtures
While nitric oxide annealing is a standard technique for improving the performance of silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors, degradation of reliability remains a serious issue. Here, we present an alternative approach based on diluted hydrogen annealing, a process...
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| Huvudupphov: | , , , , , |
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| Materialtyp: | Artigo |
| Språk: | Inglês |
| Utgiven: |
IOP Publishing
2025-01-01
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| Serie: | Applied Physics Express |
| Ämnen: | |
| Länkar: | https://doi.org/10.35848/1882-0786/adf6ff |
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