Performance and reliability improvements in SiC(0001) MOS devices via two-step annealing in H2/Ar gas mixtures

While nitric oxide annealing is a standard technique for improving the performance of silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors, degradation of reliability remains a serious issue. Here, we present an alternative approach based on diluted hydrogen annealing, a process...

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Principais autores:	Takuma Kobayashi, Hiroki Fujimoto, Shinji Kamihata, Keiji Hachiken, Masahiro Hara, Heiji Watanabe
Formato:	Artigo
Idioma:	Inglês
Publicado em:	IOP Publishing 2025-01-01
Colecção:	Applied Physics Express
Assuntos:	silicon carbide (SiC) silicon dioxide (SiO2) interface state density MOS structure MOSFET hydrogen annealing
Acesso em linha:	https://doi.org/10.35848/1882-0786/adf6ff
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