Enhancing Electrical and Interfacial Properties of BeO/4H‐SiC Structures with SiO2 Interlayer

Abstract Beryllium oxide (BeO) has exceptionally high thermal conductivity (330 W m−1·K−1), a large bandgap energy, and a high dielectric constant, making it an optimal dielectric for high‐power devices. However, its direct application on 4H‐SiC is hindered by interfacial carbon‐cluster formation du...

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Autori principali:	Sangoh Han, Dohwan Jung, Jonghyun Bae, Juyoung Chae, Haekyun Bong, Prakash R. Sultane, Christopher W. Bielawski, Jungwoo Oh
Natura:	Artigo
Lingua:	Inglês
Pubblicazione:	Wiley-VCH 2025-11-01
Serie:	Advanced Electronic Materials
Soggetti:	atomic‐layer deposition band alignment beryllium oxide interface defect silicon carbide
Accesso online:	https://doi.org/10.1002/aelm.202500469
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