Enhancing Electrical and Interfacial Properties of BeO/4H‐SiC Structures with SiO2 Interlayer
Abstract Beryllium oxide (BeO) has exceptionally high thermal conductivity (330 W m−1·K−1), a large bandgap energy, and a high dielectric constant, making it an optimal dielectric for high‐power devices. However, its direct application on 4H‐SiC is hindered by interfacial carbon‐cluster formation du...
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| Asıl Yazarlar: | , , , , , , , |
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| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
Wiley-VCH
2025-11-01
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| Seri Bilgileri: | Advanced Electronic Materials |
| Konular: | |
| Online Erişim: | https://doi.org/10.1002/aelm.202500469 |
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