Doping-dependent fixed charges in SiC/SiO2 structure
Doping-dependent fixed charges were found in SiC/SiO _2 structures through a study on threshold voltage in both n- and p-channel SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) with various body doping concentrations. Positive fixed charges increase for the p-body (n-channel) device...
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| Главные авторы: | , , |
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| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
IOP Publishing
2025-01-01
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| Серии: | Applied Physics Express |
| Предметы: | |
| Online-ссылка: | https://doi.org/10.35848/1882-0786/adb539 |
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