A low switching loss GaN trench MOSFET design utilizing a triple-shield structure
Abstract An innovative GaN trench MOSFET featuring an ultra-low gate-drain charge (Q gd ) is proposed, with its operational mechanisms thoroughly investigated using TCAD simulations. This novel MOSFET design introduces a triple-shield structure (BPSG-MOS) comprising three critical components: (1) a...
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| Hlavní autoři: | , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
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Nature Portfolio
2025-01-01
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| Edice: | Scientific Reports |
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| On-line přístup: | https://doi.org/10.1038/s41598-024-84007-w |
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