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Metal-Assisted Chemical Etching for Anisotropic Deep Trenching of GaN Array

Realizing the anisotropic deep trenching of GaN without surface damage is essential for the fabrication of GaN-based devices. However, traditional dry etching technologies introduce irreversible damage to GaN and degrade the performance of the device. In this paper, we demonstrate a damage-free, rap...

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Principais autores: Qi Wang, Kehong Zhou, Shuai Zhao, Wen Yang, Hongsheng Zhang, Wensheng Yan, Yi Huang, Guodong Yuan
Format: Artigo
Sprog:Inglês
Udgivet: MDPI AG 2021-11-01
Serier:Nanomaterials
Fag:
wet etching
MacEtch
GaN
deep trenches
microstructures
Online adgang:https://www.mdpi.com/2079-4991/11/12/3179
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