High current density 1.2 kV class HfO2-gated vertical GaN trench MOSFETs
This work reports on high current density 1.2 kV class HfO _2 -gated vertical GaN trench metal-oxide-semiconductor field-effect transistors (MOSFETs). An output current density of 330 mA mm ^−1 is reported at a drain bias of five volts, which, to our knowledge, is over ten-times the highest reported...
I tiakina i:
| Ngā kaituhi matua: | , , , , , , , |
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| Hōputu: | Artigo |
| Reo: | Inglês |
| I whakaputaina: |
IOP Publishing
2024-01-01
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| Rangatū: | Applied Physics Express |
| Ngā marau: | |
| Urunga tuihono: | https://doi.org/10.35848/1882-0786/ad85c1 |
| Ngā Tūtohu: |
Kāore He Tūtohu, Me noho koe te mea tuatahi ki te tūtohu i tēnei pūkete!
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