Electrical Effect of Nitrogen Implanted Into LDD of MOSFETs
The motivation of this study was to solve the high <inline-formula> <tex-math notation="LaTeX">$\rm I_{D,off}$ </tex-math></inline-formula> problem in 8 Volt N-channel MOSFET. We experimented with implanting nitrogen into LDD at various doses. As a result, <inline-formula> <tex-math notation="LaTeX"...
Tallennettuna:
| Päätekijät: | , , , , , , , , , , , , |
|---|---|
| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
IEEE
2024-01-01
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| Sarja: | IEEE Journal of the Electron Devices Society |
| Aiheet: | |
| Linkit: | https://ieeexplore.ieee.org/document/10634165/ |
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