A High-Performance and Low HCI Degradation LDMOS Device With a Hybrid Field Plate
In this paper, a high-performance and low-HCI (Hot carrier injection) degradation LDMOS (Lateral double diffused metal oxide semiconductor) device is introduced. It consists of an additional mini LOCOS (Local oxidation of silicon) field plate combined with a mini STI (Shallow trench isolation) field...
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| Hauptverfasser: | , , , , , , , |
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| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
IEEE
2024-01-01
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| Schriftenreihe: | IEEE Journal of the Electron Devices Society |
| Schlagworte: | |
| Online-Zugang: | https://ieeexplore.ieee.org/document/10609835/ |
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