LDMOS Drift Region With Field Oxides: Figure-of-Merit Derivation and Verification
We analytically and numerically investigate the performance of Laterally-Diffused Metal-Oxide-Semiconductor (LDMOS) transistors with Semi-circular Field OXide (S-FOX) focusing on mid-voltage (30 V – 100 V) power applications. We derive an analytical relation between breakdown voltage and on-r...
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| Главные авторы: | , , , |
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| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
IEEE
2022-01-01
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| Серии: | IEEE Journal of the Electron Devices Society |
| Предметы: | |
| Online-ссылка: | https://ieeexplore.ieee.org/document/9761987/ |
| Метки: |
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