A High-Performance and Low HCI Degradation LDMOS Device With a Hybrid Field Plate

In this paper, a high-performance and low-HCI (Hot carrier injection) degradation LDMOS (Lateral double diffused metal oxide semiconductor) device is introduced. It consists of an additional mini LOCOS (Local oxidation of silicon) field plate combined with a mini STI (Shallow trench isolation) field...

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Bibliografiset tiedot

Päätekijät:	Shaoxin Yu, Rongsheng Chen, Weiheng Shao, Weiming Yu, Xiaoyan Zhao, Zheng Chen, Weizhong Shan, Jenhao Cheng
Aineistotyyppi:	Artigo
Kieli:	Inglês
Julkaistu:	IEEE 2024-01-01
Sarja:	IEEE Journal of the Electron Devices Society
Aiheet:	Lateral double diffused metal oxide semiconductor (LDMOS) hybrid field plate (FP) figure of merit (FOM) HCI (Hot carrier injection)
Linkit:	https://ieeexplore.ieee.org/document/10609835/
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