Codice QR

Composition design and optimization of electrochemical mechanical polishing slurry for single crystal SiC

Objectives: Single crystal silicon carbide (SiC) is known for its high hardness and high chemical inertness, making it chanllenging to process effectively using traditional chemical mechanical polishing (CMP) methods. CMP often struggles to balance processing efficiency and surface quality for SiC....

Descrizione completa

Salvato in:
Dettagli Bibliografici
Autori principali: Zhibin GU, Haoxiang WANG, Xin SONG, Renke KANG, Shang GAO
Natura: Artigo
Lingua:Chinês
Pubblicazione: Zhengzhou Research Institute for Abrasives & Grinding Co., Ltd. 2024-10-01
Serie:Jin'gangshi yu moliao moju gongcheng
Soggetti:
Accesso online:http://www.jgszz.cn/article/doi/10.13394/j.cnki.jgszz.2023.0246
Tags: Aggiungi Tag
Nessun Tag, puoi essere il primo ad aggiungerne!!