Preliminary investigation of dry tribochemical mechanical polishing of single crystal SiC substrates

Aiming at the issues of low efficiency, high cost, and environmental pollution associated with silicon carbide (SiC) substrates in the polishing process, a method of tribochemical mechanical polishing of SiC substrates in the dry state (Dry Tribochemical Mechanical Polishing, DTCMP) is proposed. The...

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Detalhes bibliográficos

Principais autores:	Mingpu XUE, Wen XIAO, Zongtang LI, Zhankui WANG, Jianxiu SU
Formato:	Artigo
Idioma:	Chinês
Publicado em:	Zhengzhou Research Institute for Abrasives & Grinding Co., Ltd. 2024-02-01
coleção:	Jin'gangshi yu moliao moju gongcheng
Assuntos:	sic substrate dry tribochemical mechanical polishing material removal rate surface roughness
Acesso em linha:	http://www.jgszz.cn/article/doi/10.13394/j.cnki.jgszz.2023.0052
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