Preliminary investigation of dry tribochemical mechanical polishing of single crystal SiC substrates

Aiming at the issues of low efficiency, high cost, and environmental pollution associated with silicon carbide (SiC) substrates in the polishing process, a method of tribochemical mechanical polishing of SiC substrates in the dry state (Dry Tribochemical Mechanical Polishing, DTCMP) is proposed. The...

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Главные авторы:	Mingpu XUE, Wen XIAO, Zongtang LI, Zhankui WANG, Jianxiu SU
Формат:	Artigo
Язык:	Chinês
Опубликовано:	Zhengzhou Research Institute for Abrasives & Grinding Co., Ltd. 2024-02-01
Серии:	Jin'gangshi yu moliao moju gongcheng
Предметы:	sic substrate dry tribochemical mechanical polishing material removal rate surface roughness
Online-ссылка:	http://www.jgszz.cn/article/doi/10.13394/j.cnki.jgszz.2023.0052
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