Investigation of SiC Single Crystal Polishing by Combination of Anodic Oxidation and Mechanical Polishing
For high-quality and effective polishing of SiC, a novel polishing technique that combines anodic oxidation and mechanical polishing (AOMP) is proposed herein. To clarify the SiC surface anodic oxidation mechanism, AOMP experiments were conducted. The results show that as a result of surface oxidati...
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| Autors principals: | , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Elsevier
2020-05-01
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| Col·lecció: | International Journal of Electrochemical Science |
| Matèries: | |
| Accés en línia: | http://www.sciencedirect.com/science/article/pii/S1452398123086170 |
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