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Influences of Polishing Slurry Components on Material Removal and Surface Morphology of 4H-SiC C-Face Based on Fenton Reaction CMP

This study systematically investigates the effects of polishing slurry components on the material removal rate (MRR) and surface morphology of the C-face of 4H-SiC substrates during chemical mechanical polishing (CMP) based on the Fenton reaction. By regulating the particle size and concentration of...

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Principais autores: Ying Wei, Ruhao Meng, Yongqi Huang, Guoyan Huo, Haitao Wu, Jiapeng Chen, Guizhong Guo, Yanan Peng, Nannan Zhu, Jianxiu Su
Formato: Artigo
Idioma:Inglês
Publicado em: MDPI AG 2026-03-01
coleção:Crystals
Assuntos:
chemical mechanical polishing
4H-SiC
Fenton
hydroxyl radical
MRR and Sa
Acesso em linha:https://www.mdpi.com/2073-4352/16/3/179
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