Individual and interactive action mechanisms of mechanical, chemical, and electrical factors in Co polishing

With the continuous miniaturization of integrated circuit (IC) devices, Co is recognized as the most promising alternative to Cu as an interconnecting metal. During IC processing, Co surfaces need to be flattened. This work describes dynamic polishing experiments and static corrosion experiments on...

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Detalhes bibliográficos

Principais autores:	Fangjin Xie, Min Zhong, Wenhu Xu, Jianfeng Chen, Xiaobing Li, Meirong Yi
Formato:	Artigo
Idioma:	Inglês
Publicado em:	Tsinghua University Press 2025-06-01
coleção:	Friction
Assuntos:	co interconnect metal electrochemical mechanical polishing (ecmp) polishing factor
Acesso em linha:	https://www.sciopen.com/article/10.26599/FRICT.2025.9440961
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