Individual and interactive action mechanisms of mechanical, chemical, and electrical factors in Co polishing

With the continuous miniaturization of integrated circuit (IC) devices, Co is recognized as the most promising alternative to Cu as an interconnecting metal. During IC processing, Co surfaces need to be flattened. This work describes dynamic polishing experiments and static corrosion experiments on...

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Autors principals:	Fangjin Xie, Min Zhong, Wenhu Xu, Jianfeng Chen, Xiaobing Li, Meirong Yi
Format:	Artigo
Idioma:	Inglês
Publicat:	Tsinghua University Press 2025-06-01
Col·lecció:	Friction
Matèries:	co interconnect metal electrochemical mechanical polishing (ecmp) polishing factor
Accés en línia:	https://www.sciopen.com/article/10.26599/FRICT.2025.9440961
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