Temperature-Dependent Reverse-Recovery Behavior Analysis and Circuit-Level Mitigation of Superjunction MOSFETs

This study explores the temperature dependence of reverse-recovery behavior in superjunction metal-oxide-semiconductor field-effect-transistors (MOSFETs) using experiments and Technology Computer-Aided Design (TCAD) simulations. Results show that at 145 °C, switching failure occurs due to severe rev...

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Autors principals:	Wenrong Cui, Peng Liao, Yanghao Wang, Jianbin Guo, Yafen Yang, David Wei Zhang, Hang Xu
Format:	Artigo
Idioma:	Inglês
Publicat:	MDPI AG 2025-10-01
Col·lecció:	Micromachines
Matèries:	superjunction MOSFETs reverse recovery temperature-dependent TCAD
Accés en línia:	https://www.mdpi.com/2072-666X/16/11/1252
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