Temperature-Dependent Reverse-Recovery Behavior Analysis and Circuit-Level Mitigation of Superjunction MOSFETs

This study explores the temperature dependence of reverse-recovery behavior in superjunction metal-oxide-semiconductor field-effect-transistors (MOSFETs) using experiments and Technology Computer-Aided Design (TCAD) simulations. Results show that at 145 °C, switching failure occurs due to severe rev...

Description complète

Détails bibliographiques

Auteurs principaux:	Wenrong Cui, Peng Liao, Yanghao Wang, Jianbin Guo, Yafen Yang, David Wei Zhang, Hang Xu
Format:	Artigo
Langue:	Inglês
Publié:	MDPI AG 2025-10-01
Collection:	Micromachines
Sujets:	superjunction MOSFETs reverse recovery temperature-dependent TCAD
Accès en ligne:	https://www.mdpi.com/2072-666X/16/11/1252
Tags:	Ajouter un tag Pas de tags, Soyez le premier à ajouter un tag!