Recent research progress of SiC superjunction devices
Because of its excellent physical and chemical properties, silicon carbide (SiC) is suitable for manufacturing semiconductor devices working under high temperature and high power. Although SiC power diodes and metal-oxide-semiconductor field effect transistors (MOSFETs) have good device performance...
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| 主要な著者: | , , , , |
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| フォーマット: | Artigo |
| 言語: | Chinês |
| 出版事項: |
Editorial Department of Electric Drive for Locomotives
2023-09-01
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| シリーズ: | 机车电传动 |
| 主題: | |
| オンライン･アクセス: | http://edl.csrzic.com/thesisDetails#10.13890/j.issn.1000-128X.2023.05.004 |
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