Circuit Models of Power MOSFETs Leading the Way of GaN HEMT Modelling—A Review
Gallium nitride high-electron-mobility transistor (GaN HEMT) is a key enabling technology for obtaining high-efficient and compact power electronic systems. At the design stage of a power converter, the proper modelling of the GaN HEMT is essential to benefit from their good features and to account...
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| Autori principali: | , , |
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| Natura: | Artigo |
| Lingua: | Inglês |
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MDPI AG
2022-05-01
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| Serie: | Energies |
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| Accesso online: | https://www.mdpi.com/1996-1073/15/9/3415 |
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