Monolithic Comparators on a Novel Platform of GaN-Based D/E-Mode HEMTs by LPCVD SiN_x Passivation Compatible to Gate Dielectrics

This paper demonstrates an integrated comparator based on a novel platform of GaN-based high electron mobility transistors (HEMTs) with low pressure chemical vapor deposition (LPCVD) SiNx as both gate dielectric and passivation layer. Solving the compatibility issue in device fabrication, both high-...

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Κύριοι συγγραφείς:	Xinyu Sun, Hongwei Gao, Fangqing Li, Haoran Qie, Xin Chen, Haodong Wang, Yaozong Zhong, Xiaolu Guo, Xinchen Ge, Zhihong Feng, Qian Sun, Hui Yang
Μορφή:	Artigo
Γλώσσα:	Inglês
Έκδοση:	IEEE 2026-01-01
Σειρά:	IEEE Journal of the Electron Devices Society
Θέματα:	GaN comparator p-GaN gated HEMTs LPCVD SiNx monolithic GaN circuits
Διαθέσιμο Online:	https://ieeexplore.ieee.org/document/11357512/
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