Monolithic Comparators on a Novel Platform of GaN-Based D/E-Mode HEMTs by LPCVD SiN_x Passivation Compatible to Gate Dielectrics

This paper demonstrates an integrated comparator based on a novel platform of GaN-based high electron mobility transistors (HEMTs) with low pressure chemical vapor deposition (LPCVD) SiNx as both gate dielectric and passivation layer. Solving the compatibility issue in device fabrication, both high-...

Ausführliche Beschreibung

Bibliografische Detailangaben

Hauptverfasser:	Xinyu Sun, Hongwei Gao, Fangqing Li, Haoran Qie, Xin Chen, Haodong Wang, Yaozong Zhong, Xiaolu Guo, Xinchen Ge, Zhihong Feng, Qian Sun, Hui Yang
Format:	Artigo
Sprache:	Inglês
Veröffentlicht:	IEEE 2026-01-01
Schriftenreihe:	IEEE Journal of the Electron Devices Society
Schlagworte:	GaN comparator p-GaN gated HEMTs LPCVD SiNx monolithic GaN circuits
Online-Zugang:	https://ieeexplore.ieee.org/document/11357512/
Tags:	Tag hinzufügen Keine Tags, Fügen Sie das erste Tag hinzu!