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Improvement of DC Performance and RF Characteristics in GaN-Based HEMTs Using SiN<sub>x</sub> Stress-Engineering Technique

In this work, the DC performance and RF characteristics of GaN-based high-electron-mobility transistors (HEMTs) using the SiN<sub>x</sub> stress-engineered technique were systematically investigated. It was observed that a significant reduction in the peak electric field and an increase in the effec...

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Principais autores: Chenkai Deng, Peiran Wang, Chuying Tang, Qiaoyu Hu, Fangzhou Du, Yang Jiang, Yi Zhang, Mujun Li, Zilong Xiong, Xiaohui Wang, Kangyao Wen, Wenmao Li, Nick Tao, Qing Wang, Hongyu Yu
Format: Artigo
Sprog:Inglês
Udgivet: MDPI AG 2024-09-01
Serier:Nanomaterials
Fag:
GaN HEMTs
RF
gate leakage
SiN<sub>x</sub> stress-engineered
Online adgang:https://www.mdpi.com/2079-4991/14/18/1471
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