Alternative Measurement Approach for the Evaluation of Hot-Electron Degradation in p-GaN Gate AlGaN/GaN Power HEMTs
In this paper, a new method for evaluating hot-electron degradation in p-GaN gate AlGaN/GaN power HEMTs is proposed. The method exploits a commercial parameter analyzer to study V<sub>TH</sub> and R<sub>ON</sub> drifts induced by on-state stress at V<sub>DS</sub> = 50 V. The results show that V<sub>...
Guardat en:
| Autors principals: | , , , , , , , , |
|---|---|
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI AG
2024-07-01
|
| Col·lecció: | Electronic Materials |
| Matèries: | |
| Accés en línia: | https://www.mdpi.com/2673-3978/5/3/9 |
| Etiquetes: |
Sense etiquetes, Sigues el primer a etiquetar aquest registre!
|