High Power Normally-OFF GaN/AlGaN HEMT with Regrown p Type GaN
In this paper is presented a Normally-OFF GaN HEMT (High Electron Mobility Transistor) device using p-doped GaN barrier layer regrown by CBE (Chemical Beam Epitaxy). The impact of the p doping on the device performance is investigated using TCAD simulator (Silvaco/Atlas). With 4E17 cm<sup>−3</sup> p...
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| Autori principali: | , , , , , , , , , , , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
MDPI AG
2021-09-01
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| Serie: | Energies |
| Soggetti: | |
| Accesso online: | https://www.mdpi.com/1996-1073/14/19/6098 |
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