High Power Normally-OFF GaN/AlGaN HEMT with Regrown p Type GaN

In this paper is presented a Normally-OFF GaN HEMT (High Electron Mobility Transistor) device using p-doped GaN barrier layer regrown by CBE (Chemical Beam Epitaxy). The impact of the p doping on the device performance is investigated using TCAD simulator (Silvaco/Atlas). With 4E17 cm⁻³ p...

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主要な著者:	Gwen Rolland, Christophe Rodriguez, Guillaume Gommé, Abderrahim Boucherif, Ahmed Chakroun, Meriem Bouchilaoun, Marie Clara Pepin, Faissal El Hamidi, Soundos Maher, Richard Arès, Tom MacElwee, Hassan Maher
フォーマット:	Artigo
言語:	Inglês
出版事項:	MDPI AG 2021-09-01
シリーズ:	Energies
主題:	HEMT normally-OFF P-GaN CBE
オンライン･アクセス:	https://www.mdpi.com/1996-1073/14/19/6098
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