Alternative Measurement Approach for the Evaluation of Hot-Electron Degradation in p-GaN Gate AlGaN/GaN Power HEMTs
In this paper, a new method for evaluating hot-electron degradation in p-GaN gate AlGaN/GaN power HEMTs is proposed. The method exploits a commercial parameter analyzer to study V<sub>TH</sub> and R<sub>ON</sub> drifts induced by on-state stress at V<sub>DS</sub> = 50 V. The results show that V<sub>...
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| Glavni autori: | , , , , , , , , |
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| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
MDPI AG
2024-07-01
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| Serija: | Electronic Materials |
| Teme: | |
| Online pristup: | https://www.mdpi.com/2673-3978/5/3/9 |
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