Improvement of DC Performance and RF Characteristics in GaN-Based HEMTs Using SiN_x Stress-Engineering Technique

In this work, the DC performance and RF characteristics of GaN-based high-electron-mobility transistors (HEMTs) using the SiN_x stress-engineered technique were systematically investigated. It was observed that a significant reduction in the peak electric field and an increase in the effec...

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Hlavní autoři:	Chenkai Deng, Peiran Wang, Chuying Tang, Qiaoyu Hu, Fangzhou Du, Yang Jiang, Yi Zhang, Mujun Li, Zilong Xiong, Xiaohui Wang, Kangyao Wen, Wenmao Li, Nick Tao, Qing Wang, Hongyu Yu
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	MDPI AG 2024-09-01
Edice:	Nanomaterials
Témata:	GaN HEMTs RF gate leakage SiN<sub>x</sub> stress-engineered
On-line přístup:	https://www.mdpi.com/2079-4991/14/18/1471
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