Circuit Models of Power MOSFETs Leading the Way of GaN HEMT Modelling—A Review

Gallium nitride high-electron-mobility transistor (GaN HEMT) is a key enabling technology for obtaining high-efficient and compact power electronic systems. At the design stage of a power converter, the proper modelling of the GaN HEMT is essential to benefit from their good features and to account...

Popoln opis

Bibliografske podrobnosti

Principais autores:	Enrico Bottaro, Santi Agatino Rizzo, Nunzio Salerno
Format:	Artigo
Jezik:	Inglês
Izdano:	MDPI AG 2022-05-01
Serija:	Energies
Teme:	silicon MOSFET silicon carbide (SiC) SiC MOSFET gallium nitride (GaN) GaN HEMT wide-bandgap semiconductor
Online dostop:	https://www.mdpi.com/1996-1073/15/9/3415
Oznake:	Označite Brez oznak, prvi označite!