A 3.3 kV SiC Semi-Superjunction MOSFET with Trench Sidewall Implantations
Superjunction (SJ) technology offers a promising solution to the challenges faced by silicon carbide (SiC) Metal Oxide Semiconductor Field-Effect Transistors (MOSFETs) operating at high voltages (>3 kV). However, the fabrication of SJ devices presents significant challenges due to fabrication comple...
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| Autori principali: | , , , , , , , , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
MDPI AG
2025-02-01
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| Serie: | Micromachines |
| Soggetti: | |
| Accesso online: | https://www.mdpi.com/2072-666X/16/2/188 |
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