Measurement and Analysis of Multistate Ferroelectric Transistors in 28 nm CMOS Process

Ferroelectric field-effect transistors (FeFETs) are strong candidates for synaptic devices in neuromorphic and in-memory computing due to their multi-level programmability, non-volatility, and complementary metal-oxide-semiconductor (CMOS) compatibility. In this work, we experimentally demonstrate m...

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Váldodahkkit:	Sayma Nowshin Chowdhury, Alex L. Mazzoni, Xiaohang Zhang, Andreu L. Glasmann, Halid Mulaosmanovic, Stefan Dunkel, Gunda Beernink, Sven Beyer, Sina Najmaei, Sahil Shah
Materiálatiipa:	Artigo
Giella:	Inglês
Almmustuhtton:	IEEE 2026-01-01
Ráidu:	IEEE Journal of the Electron Devices Society
Fáttát:	Ferroelectric field-effect transistors analog synapses
Liŋkkat:	https://ieeexplore.ieee.org/document/11395490/
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