Ultrathin MoS₂-Channel FeFET Memory With Enhanced Ferroelectricity in HfZrO₂ and Body-Potential Control

We have experimentally demonstrated memory operation of a HfO₂-based ferroelectric FET (FeFET) with an ultrathin MoS₂ channel and bottom-gate structure. ZrO₂ seed layer enhances ferroelectricity in HfZrO₂ by post deposition anneal process. Surface passivat...

Täydet tiedot

Bibliografiset tiedot

Päätekijät:	Jiawen Xiang, Wen Hsin Chang, Takuya Saraya, Toshiro Hiramoto, Toshifumi Irisawa, Masaharu Kobayashi
Aineistotyyppi:	Artigo
Kieli:	Inglês
Julkaistu:	IEEE 2022-01-01
Sarja:	IEEE Journal of the Electron Devices Society
Aiheet:	MoS₂ FeFET ferroelectric HfO₂
Linkit:	https://ieeexplore.ieee.org/document/9642045/
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