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Ferroelectric Field Effect Transistors–Based Content‐Addressable Storage‐Class Memory: A Study on the Impact of Device Variation and High‐Temperature Compatibility

Hafnium oxide (HfO2)‐based ferroelectric field effect transistors (FeFETs) revolutionize the emerging nonvolatile memory area, especially with the potential to replace flash memories for several applications. In this article, the suitability of FeFET memories is investigated, especially FeFET‐based...

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Autori principali: Athira Sunil, Masud Rana SK, Maximilian Lederer, Yannick Raffel, Franz Müller, Ricardo Olivo, Raik Hoffmann, Konrad Seidel, Thomas Kämpfe, Bhaswar Chakrabarti, Sourav De
Natura: Artigo
Lingua:Inglês
Pubblicazione: Wiley 2024-04-01
Serie:Advanced Intelligent Systems
Soggetti:
FeFETs
HfO2
junction temperatures
memory arrays
vector–matrix multiplications
Accesso online:https://doi.org/10.1002/aisy.202300461
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