Electrical Characterization and Simulation of GaN-on-Si Pseudo-Vertical MOSFETs with Frequency-Dependent Gate C–V Investigation

This work presents a comprehensive study of GaN-on-Si pseudo-vertical MOSFETs focusing on single-trench and multi-trench designs. Thanks to a gate-first process flow based on an Al₂O₃/TiN MOS stack, both fabricated devices exhibit promising transistor behavior, with steady norm...

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Hlavní autoři:	Valentin Ackermann, Mohammed El Amrani, Blend Mohamad, Riadh Ben Abbes, Matthew Charles, Sebastien Cavalaglio, Manuel Manrique, Julien Buckley, Bassem Salem
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	MDPI AG 2025-10-01
Edice:	Micromachines
Témata:	GaN-on-Si MOSFET pseudo-vertical device device processing electrical characterization TCAD simulations
On-line přístup:	https://www.mdpi.com/2072-666X/16/11/1193
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