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Electrical Characterization and Simulation of GaN-on-Si Pseudo-Vertical MOSFETs with Frequency-Dependent Gate C–V Investigation

This work presents a comprehensive study of GaN-on-Si pseudo-vertical MOSFETs focusing on single-trench and multi-trench designs. Thanks to a gate-first process flow based on an Al<sub>2</sub>O<sub>3</sub>/TiN MOS stack, both fabricated devices exhibit promising transistor behavior, with steady norm...

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Principais autores: Valentin Ackermann, Mohammed El Amrani, Blend Mohamad, Riadh Ben Abbes, Matthew Charles, Sebastien Cavalaglio, Manuel Manrique, Julien Buckley, Bassem Salem
Format: Artigo
Sprog:Inglês
Udgivet: MDPI AG 2025-10-01
Serier:Micromachines
Fag:
GaN-on-Si
MOSFET
pseudo-vertical device
device processing
electrical characterization
TCAD simulations
Online adgang:https://www.mdpi.com/2072-666X/16/11/1193
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