Field plate multi-finger diamond MOSFET with ampere-class current capability and a breakdown voltage of 550 V
The field plate structure is an effective technique for improving breakdown characteristics. In this work, the gate field plate (GFP) diamond MOSFET with both ampere-class current capability and high breakdown voltage is demonstrated for the first time. The maximum drain current of the fabricated de...
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| Principais autores: | , , , , , , , , |
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| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
IOP Publishing
2026-01-01
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| Serier: | Applied Physics Express |
| Fag: | |
| Online adgang: | https://doi.org/10.35848/1882-0786/ae49df |
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