Field plate multi-finger diamond MOSFET with ampere-class current capability and a breakdown voltage of 550 V
The field plate structure is an effective technique for improving breakdown characteristics. In this work, the gate field plate (GFP) diamond MOSFET with both ampere-class current capability and high breakdown voltage is demonstrated for the first time. The maximum drain current of the fabricated de...
Сохранить в:
| Главные авторы: | , , , , , , , , |
|---|---|
| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
IOP Publishing
2026-01-01
|
| Серии: | Applied Physics Express |
| Предметы: | |
| Online-ссылка: | https://doi.org/10.35848/1882-0786/ae49df |
| Метки: |
Нет меток, Требуется 1-ая метка записи!
|