Field plate multi-finger diamond MOSFET with ampere-class current capability and a breakdown voltage of 550 V
The field plate structure is an effective technique for improving breakdown characteristics. In this work, the gate field plate (GFP) diamond MOSFET with both ampere-class current capability and high breakdown voltage is demonstrated for the first time. The maximum drain current of the fabricated de...
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| Autors principals: | , , , , , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
IOP Publishing
2026-01-01
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| Col·lecció: | Applied Physics Express |
| Matèries: | |
| Accés en línia: | https://doi.org/10.35848/1882-0786/ae49df |
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