Field plate multi-finger diamond MOSFET with ampere-class current capability and a breakdown voltage of 550 V
The field plate structure is an effective technique for improving breakdown characteristics. In this work, the gate field plate (GFP) diamond MOSFET with both ampere-class current capability and high breakdown voltage is demonstrated for the first time. The maximum drain current of the fabricated de...
Na minha lista:
| Principais autores: | , , , , , , , , |
|---|---|
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
IOP Publishing
2026-01-01
|
| coleção: | Applied Physics Express |
| Assuntos: | |
| Acesso em linha: | https://doi.org/10.35848/1882-0786/ae49df |
| Tags: |
Sem tags, seja o primeiro a adicionar uma tag!
|